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Growth of dense CNT on the multilayer graphene film by the microwave plasma enhanced chemical vapor deposition technique and their field emission properties\ud

机译:微波等离子体增强化学气相沉积技术在多层石墨烯薄膜上生长致密CNT及其场发射性能

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摘要

Catalyst assisted carbon nanotubes (CNTs) were grown on multilayer graphene (MLG) on copper and silicon substrates by the microwave plasma enhanced chemical vapor deposition technique. The transmission of the MLG was found to vary between 82 to 91.8% with the increase of deposition time. Scanning electron microscopy depicted that the MLG film survived at the deposition condition of CNTs with the appearance of the damaged structure due to the plasma. Growth of CNTs was controlled by adjusting the flow rates of methane gas. The density of carbon nanotubes was observed to increase with a higher supply of methane gas. It was observed that the field emission properties were improved with the increased density of CNTs on MLG. The lowest turn-on field was found to be 1.6 V mu m(-1) 1 accompanied with the highest current density of 2.8 mA cm(-2) for the CNTs with the highest density. The findings suggested that the field emission properties can be tuned by changing the density of CNTs.\ud
机译:通过微波等离子体增强化学气相沉积技术,在铜和硅基板上的多层石墨烯(MLG)上生长了催化剂辅助的碳纳米管(CNT)。发现MLG的透射率随着沉积时间的增加而在82%至91.8%之间变化。扫描电子显微镜显示,MLG膜在CNT的沉积条件下得以存活,并且由于等离子体而出现了受损的结构。通过调节甲烷气体的流速来控制CNT的生长。观察到碳纳米管的密度随着甲烷气体供应的增加而增加。观察到,场发射特性随着MLG上CNT密度的增加而提高。发现最低的导通电场为1.6 Vμm(-1)1,伴随着最高密度的CNT的最高电流密度为2.8 mA cm(-2)。研究结果表明,可以通过改变CNT的密度来调整场发射特性。\ ud

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